elektronische bauelemente 2SA1015K pnp type plastic encapsulate transistors ? features . power dissipation p cm : 0.2 w ( ta = 25 : ) . collector current i cm : -0.15 a . collector-base voltage v (br)cbo : -50 v 2.emitter 3.collector 1.base ? absolute maximum ratings and electrical characteristics (ta = 25 : ) type number symbol test conditions min. typ. max. unit collector-base b reakdown voltage v (br)cbo i c = -100 a, i e = 0 a -50 - - v collector-emitter b reakdown voltage v (br)ceo i c = -0 .1 ma, i b = 0 a -50 - - v emitter-base b reakdown voltage v (br)ebo i e = -10 a, i c = 0 a -5 - - v collector cut-off current i cbo v cb = -50 v, i e = 0 a - - -0.1 a collector cut-off current i ceo v ce = -50 v, i b = 0 a - - -0.1 a emitter cut-off current i ebo v eb = -5 v, i c = 0 a - - -0.1 a dc current gain h fe v ce = -6 v, i c = -2 ma 130 - 400 collector-emitter saturation voltage v c e (sat) i c = -100 ma, i b = -10 ma - - -0.3 v ba se-emitter sa turati on vo ltage v be(sat) i c = -100 ma, i b = -10 ma - - -1.1 v v ce = 10 v, i c = 1 ma, transition frequency f t f = 30 mhz 80 - - mhz operating and storage junction temperature range t j , t stg - - 55 ~ +150 : ? h fe values are classified as follows: rank l h h fe 130 ~ 200 200 ~ 400 http://www.secosgmbh.com/ any changing of specification will not be informed individual marking: ba k j c h l a b s g v 3 1 2 d top view 1 2 3 dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
e l ek tr on isch e b a u e lemen te 2 s c 1 015 k p np t y p e plas tic e n cap su late t r an s i s t ors ht t p :/ /ww w . s eco s g m bh. c o m / a ny c hangi ng of s pe c i f i c ati on w i l l not be i n f orm ed i ndi vi dua l 01-jun-2002 rev. a page 2 of 2
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